Silicon raw material is melted at high temperature, a seed crystal is brought into contact, and by slowly pulling it upward while rotating, a cylindrical single-crystal ingot is formed.

The high-purity silicon single-crystal ingot is sliced using a wire saw or similar equipment and cut into a uniform thickness. The sliced ingot is separated into wafers, cleaned, and then stored in cassettes.

After slicing, the wafer edge is polished to form the desired shape and smooth the shape.

In semiconductor manufacturing, improving edge quality has become an essential process. We provide various proposals to meet customer requirements.

Both sides of the wafer are planarized using a polishing plate and abrasive to achieve a uniform thickness.

Damage caused by mechanical processing such as slicing and lapping is removed using chemical solutions.

Using a chemical solution containing fine abrasive grains and a polishing pad, minute wafer surface irregularities are removed and further planarization is achieved.

Residual substances and contaminants on the wafer surface are removed using ultrapure water and chemical solutions. The wafer is then rinsed with ultrapure water and dried to maintain a clean, high-quality surface.

The wafer is processed in a high-temperature oxygen or steam environment to form a silicon oxide film on the surface. This oxide film functions as an insulating layer and improves the electrical characteristics of transistors and other devices.

Ultrapure water and chemical solutions are used to remove fine particles, organic substances, and metal contamination adhering to the wafer surface.

After forming an insulating film, openings are created by etching the pattern formed through exposure and development, and metal is filled in by sputtering or vapor deposition.

Needle-like electrodes called probes are brought into contact with the circuit to evaluate electrical characteristics. This is generally also referred to as wafer inspection.

This is a wafer transport and positioning machine that accurately brings probes into contact with all IC chips formed on the wafer and tests their electrical characteristics by applying current. Tokyo Seimitsu develops new machines tailored to the features of new devices and provides them along with technology to customers worldwide.

A protective tape is applied to the device side of the wafer to protect the surface from physical damage and contamination during back surface grinding.

A grinding wheel containing diamond abrasive grains is rotated at high speed to grind the wafer down to a specified thickness, making it thinner. This process contributes to device miniaturization and improved thermal characteristics. In recent years, demand for ultra-thin processing below 10 microns has increased.

This is a machine that performs planar processing of wafers using a grinding wheel. It is equipped with our proprietary high-rigidity mechanism, achieving high precision, high throughput, and low-damage processing.

The grinding wheel is specially tuned for use with the high rigid grinder. It maximizes the performance of the high rigid grinder and achieves low wear, low damage, and mirror-finish processing. It is used in combination with the high rigid grinder.

The thinned wafer is attached to a ring frame with dicing tape and securely fixed in place. This prevents damage to the thinned wafer and ensures chip retention during dicing.

The protective tape applied to the device surface of the wafer is carefully removed.

This cuts the wafer into individual chips (dies). Generally, cutting is performed by rotating a diamond blade at high speed. In recent years, laser-based dry processes have also increased and are used according to requirements.

This machine separates a wafer on which multiple ICs are formed into individual chips through a cutting process. In response to the diversification of dicing processes driven by the advancement of various devices, we provide high-throughput and high-quality processing by combining our long-established "high-precision positioning technology" with optimal processing methods (blade dicing and laser dicing).

Tokyo Seimitsu’s precision ACCRETECH blades combine innovative development technology with application technology, offering a product lineup that supports all types of workpieces and processing applications, meeting the demand for "high quality and low cost" required by the times.

This bonds individual chips (dies) to a package substrate. The separated chips are placed at precise positions on the substrate using a die bonder and then cured to secure adhesion.

This electrically connects individual chips (dies) to a package substrate or lead frame. The pads of the chip fixed to the substrate and the substrate terminals are connected using fine gold or aluminum wires with a wire bonder by applying ultrasonic sound, heat, and pressure.

The chip and substrate after wire bonding are encapsulated with a sealing material such as epoxy resin to protect them from physical damage and environmental factors.

Unnecessary portions of the lead frame that are attached to the packaged device are cut off, and the packaged device is shaped into a form that allows accurate mounting on a printed circuit board.

Multiple packaged devices are set on a dedicated board and operated for several hours to several days in a burn-in chamber under high temperature (typically around 125°C) and electrical stress (rated voltage and current). This simulates operation under harsh conditions and enables early detection of initial failures.

Appearance inspection is performed using a high-resolution inspection system to check for physical defects such as cracks and foreign matter adhesion.

Identification information is engraved on the completed semiconductor devices. Marking is performed to facilitate product traceability and identification.